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Continuous Drain Current (ID)：
Drain Current-Max (Abs) (ID)：
Drain to Source Breakdown Voltage：
Fall Time (Typ)：
FET Feature：
FET Type：
Gate to Source Voltage (Vgs)：
Input Capacitance (Ciss) (Max) @ Vds：
JESD-609 Code：
Max Power Dissipation：
Package / Case：
Packaging：
Published：
Rds On (Max) @ Id, Vgs：
Terminal Finish：
Turn On Delay Time：
Turn-Off Delay Time：
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2 Records
Image Part Manufacturer Description Price Stock Action
VT6K1T2CR
VT6K1T2CR
ROHM Semiconductor
MOSFET 2N-CH 20V 0.1A VMT6
-
RFQ
14,451
In-stock Warehouse
ADD TO RFQ
EM6J1T2R
EM6J1T2R
ROHM Semiconductor
MOSFET 2P-CH 20V 0.2A EMT6
-
RFQ
2,624
In-stock Warehouse
ADD TO RFQ
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